 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| TEA2025B TEA2025D STEREO AUDIO AMPLIFIER DUAL OR BRIDGE CONNECTION MODES FEW EXTERNAL COMPONENTS SUPPLY VOLTAGE DOWN TO 3V HIGH CHANNEL SEPARATION VERY LOW SWITCH ON/OFF NOISE MAX GAIN OF 45dB WITH ADJUST EXTERNAL RESISTOR SOFT CLIPPING THERMAL PROTECTION 3V < VCC < 15V P = 2 * 1W, VCC = 6V, RL = 4 P = 2 * 2.3W, VCC = 9V, RL = 4 P = 2 * 0.1W, VCC = 3V, RL = 4 ABSOLUTE MAXIMUM RATINGS Symbol VS POWERDIP 12+2+2 SO20 (12+4+4) ORDERING NUMBERS: TEA2025B (PDIP) TEA2025D (SO) DESCRIPTION The TEA2025B/D is a monolithic integrated circuit in 12+2+2 Powerdip and 12+4+4 SO, intended for use as dual or bridge power audio amplifier portable radio cassette players. Parameter Supply Voltage Ouput Peak Current Junction Temperature Storage Temperature Test Conditions 15 Unit V IO TJ Tstg 1.5 150 150 A C C BLOCK DIAGRAM GND(Sub) IN 1+ FEED 50 10K START CIRCUIT SVR + GND GND BOOT 1 OUT 1 THERMAL PROTECT. 1 1 5K DECOUPLING VS+ BRIDGE 50 IN 2+ + 2 10K 2 50 D94AU120 FEED GND GND BOOT 2 OUT 2 June 1994 1/9 TEA2025B - TEA2025D POWERDIP 12+2+2 PIN CONNECTION (Top view) BRIDGE OUT.2 BOOT.2 GND GND FEEDBACK IN.2 (+) SVR 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 +Vs OUT.1 BOOT.1 GND GND FEEDBACK IN.1 (+) GND (sub.) SO 12+4+4 PIN CONNECTION (Top view) BRIDGE OUT 2 BOOT 2 GND GND GND GND FEEDBACK IN 2(+) SVR 1 2 3 4 5 6 7 8 9 10 D94AU119 20 19 18 17 16 15 14 13 12 11 VCC OUT 1 BOOT 1 GND GND GND GND FEEDBACK IN 1(+) GND(Sub) THERMAL DATA Symbol R th j-case Rth j-amb Description Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max SO 12+4+4 (*) 15 65 PDIP 12+2+2 (**) 15 60 Unit C/W C/W (*) The Rth j-amb is measured with 4sq cm copper area heatsink (**) The Rth j-amb is measured on devices bonded on a 10 x 5 x 0.15cm glass-epoxy substrate with a 35m thick copper surface of 5 cm2. 2/9 TEA2025B - TEA2025D ELECTRICAL CHARACTERISTICS (Tamb = 25C, VCC = 9V, Stereo unless otherwise specified) Symbol VS IQ VO AV AV Rj PO Parameter Supply Voltage Quiescent Current Quiescent Output Voltage Voltage Gain Voltage Gain Difference Input Impedance Output Power (d = 10%) Stereo 8 (per channel) 9V 9V 6V 6V 6V 6V 3V 3V 12V 9V 6V 6V 3V 3V Stereo Bridge 40 Test Conditions Min. 3 Typ. 35 4.5 Max. 12 50 47 53 1 Unit V mA V dB dB K Stereo Bridge 43 49 45 51 30 4 8 4 8 16 32 4 32 8 8 4 8 16 32 1.7 0.7 2.3 1.3 1 0.6 0.25 0.13 0.1 0.02 2.4 4.7 2.8 1.5 0.18 0.06 0.3 0.5 46 1.5 3 52 3 6 1.5 W Bridge W d SVR EN(IN) CT Distortion Supply Voltage Rejection Input Noise Voltage Cross-Talk Vs = 9V; RL = 4 f = 100Hz, VR = 0.5V, Rg = 0 RG = 0 R G = 10 4 f = 1KHz, Rg = 10K % dB mV dB 40 Term. N (PDIP) DC VOLT (V) 1 0.04 2 4.5 3 8.9 4 0 5 0 6 0.6 7 0.04 8 8.5 9 0 10 0.04 11 0.6 12 0 13 0 14 8.9 15 4.5 16 9 Figure 1: Bridge Application (Powerdip) Figure 2: Stereo Application (Powerdip) C1 C10 C4 C8 C2 C11 C9 C3 C5 C6 C7 3/9 TEA2025B - TEA2025D Figure 3: Supply Current vs. Supply Voltage (RL = 4) I(mA) 50 Figure 4: Output Voltage vs. Supply Voltage 8 7 Vo(V) 40 6 5 30 4 3 20 STEREO 10 3 2 1 0 6 9 Vs(V) 12 15 3 6 9 Vs(V) 12 15 STEREO Figure 5: Output Power vs. Supply Voltage (THD = 10%, f = 1KHz) Po(W) 3.5 3 2.5 Rl=4ohm 2 1.5 1 STEREO 0.5 0 3 6 9 Vs(V) 12 15 Rl=8ohm Rl=16ohm Figure 6: THD versus Output Power (f = 1KHz, VS = 6V) THD(%) 10 Rl=8ohm Rl=16ohm Rl=4 OHM 1 0.1 0 STEREO 0.2 0.4 0.6 Po(W) 0.8 1 4/9 TEA2025B - TEA2025D APPLICATION INFORMATION Input Capacitor Input capacitor is PNP type allowing source to be referenced to ground. In this way no input coupling capacitor is required. However, a series capacitor (0.22 uF)to the input side can be useful in case of noise due to variable resistor contact. Bootstrap The bootstrap connection allows to increase the output swing. The suggested value for the bootstrap capacitors (100uF) avoids a reduction of the output signal also at low frequencies and low supply voltages. Voltage Gain Adjust STEREO MODE The voltage gain is determined by on-chip resistors R1 and R2 together with the external RfC1 series connected between pin 6 (11) and ground. The frequency response is given approximated by: 1 Rf + R2 + JWC1 With Rf=0, C1=100 uF, the gain results 46 dB with pole at f=32 Hz. THE purpose of Rf is to reduce the gain. It is recommended to not reduce it under 36 dB. BRIDGE MODE Figure 7 VOUT = VIN R1 Output Capacitors. The low cut off frequency due to output capacitor depending on the load is given by: FL = 1 2 COUT * RL The total gain of the bridge is given by: R3 R1 ) (1+ 1 1 R4 R2+R4+ Rf+R2 + JWC1 JWC1 and with the suggested values (C1 = C2 = 100 F, Rf= 0) means: Gv = 52 dB R1 Figure 8 VOUT = VIN with first pole at f = 32 Hz with COUT 470F and RL = 4 ohm it means F L = 80 Hz. Pop Noise Most amplifiers similar to TEA 2025B need external resistors between DC outputs and ground in order to optimize the pop on/off performance and crossover distortion. Figure 9 The bridge configuration is realized very easily thanks to an internal voltage divider which provides (at pin 1) the CH 1 output signal after reduction. It is enough to connect pin 6 (inverting input of CH 2) with a capacitor to pin 1 and to connect to ground the pin 7. The TEA 2025B solution allows to save components because of such resistors (800 ohm)are included into the chip. 5/9 TEA2025B - TEA2025D Stability A good layout is recommended in order to avoid oscillations. Generally the designer must pay attention on the following points: - Short wires of components and short connections. - No ground loops. - Bypass of supply voltage with capacitors as nearest as possible to the supply I.C.pin.The low value(poliester)capacitors must have good temperature and frequency characteristics. COMPONENT C1,C2 - No sockets. 2) the heatsink can have a smaller factor of safety compared with that of a conventional circuit. There is no device damage in the case of excessive junction temperature: all that happens is that PO (and therefore Ptot) and Id are reduced. APPLICATION SUGGESTION The recommended values of the components are those shown on stereo application circuit of Fig. 2 different values can be used, the following table can help the designer. RECOMMENDED VALUE 0.22F PURPOSE INPUT DC DECOUPLING IN CASE OF SLIDER CONTACT NOISE OF VARIABLE RESISTOR RIPPLE REJECTON LARGER THAN SMALLER THAN C3 100F DEGRADATION OF SVR, INCREASE OF THD AT LOW FREQUENCY AND LOW VOLTAGE INCREASE OF LOW FREQUENCY CUTOFF DANGER OSCILLATIONS OF C4,C5 C6,C7 100F 470F BOOTSTRAP OUTPUT DECOUPLING FREQUENCY STABILITY INVERTING INPUT DC DECOUPLING DC C8,C9 C10, C11 0.15F 100F INCREASE OF LOW FREQUENCY CUTOFF 6/9 TEA2025B - TEA2025D SO20 PACKAGE MECHANICAL DATA DIM. MIN. A a1 a2 b b1 C c1 D E e e3 F L M S 7.4 0.5 12.6 10 1.27 11.43 7.6 1.27 0.75 8 (max.) 0.291 0.020 13.0 10.65 0.35 0.23 0.5 45 (typ.) 0.496 0.394 0.050 0.450 0.299 0.050 0.030 0.512 0.419 0.1 mm TYP. MAX. 2.65 0.3 2.45 0.49 0.32 0.014 0.009 0.020 0.004 MIN. inch TYP. MAX. 0.104 0.012 0.096 0.019 0.013 7/9 TEA2025B - TEA2025D DIP16 PACKAGE MECHANICAL DATA DIM. MIN. a1 B b b1 D E e e3 F I L Z 3.30 1.27 8.80 2.54 17.78 7.10 5.10 0.130 0.050 0.38 0.51 0.85 0.50 0.50 20.0 0.346 0.100 0.700 0.280 0.201 0.015 1.40 mm TYP. MAX. MIN. 0.020 0.033 0.020 0.020 0.787 0.055 inch TYP. MAX. 8/9 TEA2025B - TEA2025D Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. (c) 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore Spain - Sweden - Switzerland - Taiwan - Thaliand - United Kingdom - U.S.A. 9/9 |
Price & Availability of TEA2025B
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |